BD2052AF-E2 데이터 시트보기 (PDF) - ROHM Semiconductor

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BD2052AF-E2

2ch High Side Switch ICs for USB Devices and Memory Cards

ROHM Semiconductor 

BD6512F,BD6513F,BD6516F,BD6517F,BD2042AFJ,BD2052AFJ

●Absolute Maximum Ratings

◎BD6512F/BD6513F/BD6516F/BD6517F

Parameter

Symbol

Ratings

Unit

Supply voltage

VDD

-0.3 to 6.0

V

CTRL voltage

VCTRL

-0.3 to VDD+0.3

V

Flag voltage

Output voltage

Storage temperature

VFLAG

-0.3 to 6.0

V

VOUT

-0.3 to VDD+0.3

(BD6512F/ BD6513F)

-0.3 to 6.0

(BD6516F/ BD6517F)

V

V

TSTG

-55 to 150

ºC

Power dissipation *1

Pd

560 *1

mW

◎BD2042AFJ/ BD2052AFJ

Parameter

Symbol

Ratings

Unit

Supply voltage

VIN

-0.3 to 6.0

V

EN,/EN voltage

VEN, V/EN

-0.3 to 6.0

V

/OC voltage

V/OC

-0.3 to 6.0

V

/OC current

IS/OC

10

mA

OUT voltage

VOUT

-0.3 to 6.0

V

Storage temperature

TSTG

Power dissipation *1

Pd

*1 This value decreases 4.48mW/℃ above Ta=25℃.

* Resistance radiation design is not doing.

-55 to 150

560*1

ºC

mW

●Operating conditions

◎BD6512F/BD6513F/BD6516F/BD6517F

Parameter

Symbol

Ratings

Unit

Supply voltage

VDD

3.0 to 5.5

V

Operation temperature

TOPR

-25 to 85

°C

Continuous output current

ILO

0 to 500

mA

◎BD2042AFJ/ BD2052AFJ

Parameter

Symbol

Ratings

Unit

Supply voltage

VIN

2.7 to 5.5

V

Operation temperature

TOPR

-40 to 85

ºC

Continuous output current

ILO

0 to 500

mA

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2/20

Technical Note

2011.05 - Rev.B

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