BD645-S 데이터 시트보기 (PDF) - Bourns, Inc

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BD645-S

NPN SILICON POWER DARLINGTONS

Bourns, Inc 

BD645, BD647, BD649, BD651

NPN SILICON POWER DARLINGTONS

50000

10000

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS130AD

TC = -40°C

TC = 25°C

TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

2·0

TCS130AB

tp = 300 µs, duty cycle < 2%

IB = IC / 100

1·5

1000

VCE = 3 V

tp = 300 µs, duty cycle < 2%

100

0·5

1·0

IC - Collector Current - A

Figure 1.

1·0

0·5

10

0·5

1·0

TC = -40°C

TC = 25°C

TC = 100°C

10

IC - Collector Current - A

Figure 2.

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

3·0

TCS130AC

TC = -40°C

TC = 25°C

2·5 TC = 100°C

2·0

1·5

1·0

IB = IC / 100

tp = 300 µs, duty cycle < 2%

0·5

0·5

1·0

10

IC - Collector Current - A

Figure 3.

MAY 1993 - REVISED JUNE 2013

3

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

Users should verify actual device performance in their specific applications.

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