BD6761FS-E2 데이터 시트보기 (PDF) - ROHM Semiconductor
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BD6761FS-E2 Datasheet PDF : 23 Pages
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BD6761FS,BD6762FV
Technical Note
BD6762FV (Unless otherwise specified, Ta=25°C, VCC=24V)
Parameter
Symbol
Min.
Limits
Typ.
Overall
Circuit current 1
ICCS
5.1
7.6
Circuit current 2
ICC
10
17
VREG voltage
VREG
4.5
5
Low voltage protection level
VUVON
9.5
11.5
Low voltage protection hysteresis level VUVHYS 0.4
0.5
Hall amp
Input bias current
IBH
－
1
In-phase input voltage range
VHAR
0
－
Input level
VINH
50
－
PWM
High CFE voltage
VCFEH
2.6
2.9
Low CFE voltage
VCFEL
1.2
1.4
CFE oscillating frequency
FCFE
13
16
REF voltage
VRFE
0.75
0.95
FG amp
Input bias current
IFGM
-1
－
Input offset voltage
VFGOF
-10
－
High output voltage
VFGOH
3.5
4.0
Low output voltage
VFGOL
－
1.0
Low FGS output voltage
VFGSL
－
0.1
Open loop gain
GFG
45
54
Bias voltage
VBFG
2.25
2.50
Hysteresis width
VFGHYS 100
180
Integration amp
Di clamp voltage 1
VDI1
1.5
2.1
Di clamp voltage 2
VDI2
0.5
0.7
Bias voltage
VBERR 2.25
2.50
Speed discriminator
High output voltage
VDOH VREG-0.3 VREG-0.1
Low output voltage
VDOL
－
0.1
PLL
High output voltage
VPOH VREG-0.45 VREG-0.15
Low output voltage
VPOL
－
0.15
Lock detection
Low output voltage
VLDL
－
0.15
Lock protection
CLK cycle for protection circuit
TLP
13
20
VCO
CLK input frequency range
FCLK
0.2
－
High-level CLK input voltage
VCKH
2.2
－
Low-level CLK input voltage
VCKL
0
－
High-level CLK input current
ICKH
-10
－
Low-level CLK input current
ICKL
-140
-100
Max.
10.2
25
5.5
13.5
0.6
3
3
－
3.2
1.6
19
1.15
1
10
－
1.5
0.3
－
2.75
250
2.7
0.9
2.75
－
0.3
－
0.45
0.3
27
2.5
VREG
0.8
10
-60
Unit
Conditions
mA ST/SP=OPEN
mA ST/SP=GND
V IVREG=-1mA
V
V
μA
V
mVp-p
V
V
kHz RFE=20K, CFE=1000pF
V
μA
mV
V I=-0.5mA
V I=0.5mA
V I=2mA
dB f=3kHz
V
mV
V INTIN=0.1mA
V INTOUT＝0.1mA
V INTIN=INTOUT
V I=-0.1mA
V I=0.1mA
V I=-0.1mA
V I=0.1mA
V I=2mA
msec LP=0.1μF
kHz Designed value (VCO alone)
V
V
μA
μA
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3/22
2010.06 - Rev.A
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