BD705 데이터 시트보기 (PDF) - Inchange Semiconductor

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BD705

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD705

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= 0.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 45V(Min.)

·Complement to Type BD706

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

45

V

VCES

Collector-Emitter Voltage VBE= 0

45

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

12

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

5

A

75

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

1.67 ℃/W

Thermal Resistance, Junction to Ambient 70 ℃/W

isc Website：www.iscsemi.cn

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