BD705 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD705 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD705
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 22V; IB=B 0
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 2A; VCE= 2V
hFE-3
DC Current Gain
IC= 4A; VCE= 4V
hFE-4
DC Current Gain
IC= 10A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.3A; VCE= 3V
MIN MAX UNIT
45
V
1.0
V
1.5
V
1.0 mA
0.1
1.0
mA
1.0 mA
40 400
30
20 150
5
3
MHz
isc Website：www.iscsemi.cn
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