BD810G 데이터 시트보기 (PDF) - ON Semiconductor
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BD810G Datasheet PDF : 5 Pages
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BD809 (NPN), BD810 (PNP)
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
SINGLE P(pk)
qJC(t) = r(t) qJC
PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0 3.0 5.0
t, PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 6. Thermal Response
Note 1:
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
ORDERING INFORMATION
Device
Package
Shipping†
BD809
BD809G
TO-220
TO-220
(Pb-Free)
50 Units / Rail
BD810
BD810G
TO-220
TO-220
(Pb-Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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