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BD8203EFV 데이터 시트보기 (PDF) - ROHM Semiconductor

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BD8203EFV
ROHM
ROHM Semiconductor ROHM
BD8203EFV Datasheet PDF : 26 Pages
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BD8203EFV
(8) Start-up Sequence Regulations
REGRST
REGCTL
REG5
MUTE4
MUTE123
If the signal is input before standing up of REG5, the leakage voltage is generated in REG5.
FWD
RVS
After REG5 stands up, the control signal is
turned on.
The control signal is turned off before REG5
stands and it descends.
Terminal where the destination of hanging the diode on the power supply side is REG5 must defend
the above-mentioned sequence so as not to impress the voltage more than the voltage of REG5
terminal.
Please insert in the cereal and use the limit resistance for the terminal when you impress the voltage
more than the voltage of REG5 terminal.
(Limit resistance 10kO or more is inserted in the cereal about REGCTL terminal. )
Terminal where destination of hanging diode on power supply side is REG5
REGCTLMUTE123MUTE4VCIRVSFWDIN1、IN2IN3IN4OPIN+、OPIN-VCTL
Method of Calculating Gain
(a) Loading
VCTL
VIN
FWD RVS
VIAMP
Level
shift
10kΩ
10kΩ
0.705×2×VIN + Vref
×2 VO+
×2
VO-
- 0.705×2×VIN + Vref
10kΩ 10kΩ
VVO+
Vref
VVO-
×0.705
It becomes 2×2=4times between outputs.
(b) Focus, Tracking, Sled, Spindle
Vref
(VPVCC2-0.7)/2
Total Gain = 0.705×2×2 = 2.82 = 9dB
VIN
Vc
IN
VIAMP
40kΩ
40kΩ
×1
Vc
Level shift
0kΩ
0kΩ
80kΩ
40kΩ
×2×VIN
+
Vref
×2 VO+
×2
VO-
8400kkΩΩ×2×VIN + Vref
0kΩ 10kΩ
VVO+
Vref
VVO-
80kΩ
40kΩ
=×2
Vref
CH1,2=VPVCC1/2
CH2,3,4=(VPVCC2-0.7)/2
It becomes 2×2=4times between outputs.
Total Gain = 2×2×2 = 8 = 18dB
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© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
10/22
TSZ02201-0H5H0BK01520-1-2
04.Nov.2015 Rev.001

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