BD8963EFJ-E2(2010) 데이터 시트보기 (PDF) - ROHM Semiconductor

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BD8963EFJ-E2
(Rev.:2010)

Low Noise High-efficiency Switching Regulator with Built-in Power MOSFET

ROHM Semiconductor 

BD8963EFJ

Technical Note

●Information on advantages

Advantage 1 : Offers fast transient response with current mode control system.

Conventional product (Load response IO= 0.5A→1.5A)

BD8963EFJ (Load response IO= 0.5A→1.5A)

VOUT

75mV

VOUT

36mV

IOUT

IOUT

Voltage drop due to sudden change in load was reduced by about 50%.

Fig.17 Comparison of transient response

Advantage 2 : Offers high efficiency with synchronous rectifier

Utilizes the synchronous rectifying mode and the low on-resistance MOS FETs incorporated as power transistor.

ON resistance of P-channel MOS FET : 145mΩ(Typ.)

ON resistance of N-channel MOS FET : 80mΩ(Typ.)

100

90

80

70

60

50

40

30

20

10

0

10

【VOUT=1.1V】

VCC=5.0V

Ta=25℃

100

1000

OUTPUT CURRENT:IOUT[mA]

Fig.18 Efficiency

10000

Advantage 3 :・Supplied in smaller package due to small-sized power MOS FET incorporated.

・Output capacitor Co required for current mode control: 10μF ceramic capacitor

・Inductance L required for the operating frequency of 1 MHz: 1.5μH inductor

Reduces a mounting area required.

VCC

RCOMP

CCOMP

DC/DC

Convertor

Controller

Cin

L

VOUT

Co

15mm

CIN

RCOMP

L

10mm

CCOMP

CO

Fig.19 Example application

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© 2010 ROHM Co., Ltd. All rights reserved.

5/17

2010.06 - Rev.A

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