BDT61 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDT61 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistors
BDT61/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT61
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT61A
BDT61B
IC= 30mA; IB= 0
BDT61C
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDT61
Collector
Cutoff Current
BDT61A
BDT61B
BDT61C
BDT61
IC= 1.5A ; VCE= 3V
VCB= 60V; IE= 0
VCB= 30V; IE= 0; TJ=150℃
VCB= 80V; IE= 0
VCB= 40V; IE= 0; TJ=150℃
VCB= 100V; IE= 0
VCB= 50V; IE= 0; TJ=150℃
VCB= 120V; IE= 0
VCB= 60V; IE= 0; TJ=150℃
VCE= 30V; IB=B 0
ICEO
Collector
Cutoff Current
BDT61A VCE= 40V; IB=B 0
BDT61B VCE= 50V; IB=B 0
BDT61C VCE= 60V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1.5A; VCE= 3V
VECF
C-E Diode Forward Voltage
IE= 1.5A
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 2A; IB1= -IB2= 8mA;
VBE(off)= -5V; RL= 20Ω
MIN TYP. MAX UNIT
60
80
V
100
120
2.5
V
2.5
V
0.2
2.0
0.2
2.0
mA
0.2
2.0
0.2
2.0
0.5
0.5
mA
0.5
0.5
5
mA
750
2.0
V
1.0
μs
4.5
μs
isc Website：www.iscsemi.cn
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