BDX53F 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
BDX53F Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX53F
DESCRIPTION
·Collector Current -IC= 8A
·High DC Current Gain-
: hFE= 500(Min)@ IC= 2A
·Complement to Type BDX54F
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER
Collector-Emitter Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.08 ℃/W
70 ℃/W
isc Website：www.iscsemi.cn
Share Link: 