BDX53F 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDX53F Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX53F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB=B 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 10mA
VECF
C-E Diode Forward Voltage
IF= 2A
ICEO
Collector Cutoff Current
VCE= 80V; IB=B 0
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
MIN TYP. MAX UNIT
160
V
2.0
V
2.5
V
2.5
V
0.5 mA
0.2 mA
5
mA
500
150
isc Website：www.iscsemi.cn
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