BDX85A 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDX85A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX85/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement to Type BDX86/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX85
45
UNIT
BDX85A
60
VCBO
Collector-Base Voltage
V
BDX85B
80
BDX85C 100
BDX85
45
BDX85A
60
VCEO
Collector-Emitter Voltage
V
BDX85B
80
BDX85C 100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IBB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
100
mA
100
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc Website：www.iscsemi.cn
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