BF1101WR 데이터 시트보기 (PDF) - Philips Electronics

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BF1101WR

N-channel dual-gate MOS-FETs

Philips Electronics 

Philips Semiconductors

N-channel dual-gate MOS-FETs

Product specification

BF1101; BF1101R; BF1101WR

handbook,2h0alfpage

ID

(mA)

16

12

8

MGS299

VG2-S = 4 V 3 V

3.5 V

2.5 V

2V

4

1.5 V

1V

0

0

0.4

0.8

1.2

1.6

2

VG1-S (V)

VDS = 5 V.

Tj = 25 °C.

Fig.5 Transfer characteristics; typical values.

handbook,2h0alfpage

ID

(mA)

16

12

8

4

0

0

MGS300

VG1-S = 1.6 V

1.5 V

1.4 V

1.3 V

1.2 V

1.1 V

1V

2

4

6

8

VDS (V)

VG2-S = 4 V.

Tj = 25 °C.

Fig.6 Output characteristics; typical values.

handbook1,0h0alfpage

I G1

(µA)

80

MGS301

VG2-S = 4 V 3.5 V

3V

60

2.5 V

40

2V

20

0

0

0.5

1

1.5

2

2.5

VG1-S (V)

VDS = 5 V.

Tj = 25 °C.

Fig.7 Gate 1 current as a function of gate 1

voltage; typical values.

1999 May 14

handbook,4h0alfpage

yfs

(mS)

30

20

MGS302

VG2-S = 4 V

3.5 V

3V

2.5 V

10

2V

0

0

4

8

12

16

20

ID (mA)

VDS = 5 V.

Tj = 25 °C.

Fig.8 Forward transfer admittance as a

function of drain current; typical values.

5

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