BF1009SRE6327 데이터 시트보기 (PDF) - Infineon Technologies

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BF1009SRE6327

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF1009S...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Forward transconductance

VDS = 9 V, VG2S = 6 V

Gate1 input capacitance

VDS = 9 V, VG2S = 6 V, f = 10 MHz

Output capacitance

VDS = 9 V, VG2S = 6 V, f = 10 MHz

Power gain (self biased)

VDS = 9 V, VG2S = 6 V, f = 800 MHz

Noise figure

gfs

Cg1ss

Cdss

Gp

F

26 30

- mS

-

2.1 2.7 pF

-

0.9

-

18 22

- dB

-

1.4 2.1 dB

VDS = 9 V, VG2S = 6 V, f = 800 MHz

Gain control range

VDS = 9 V, VG2S = 6 ... 0 V, f = 800 MHz

∆Gp

40 50

-

3

2007-04-20

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