BF1205C 데이터 시트보기 (PDF) - Philips Electronics
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BF1205C Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
10
bos, gos
(mS)
1
10−1
001aaa567
bos
gos
10−2
10
102
103
f (MHz)
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V; ID(a) = 19 mA.
Fig 16. Output admittance as a function of frequency; typical values.
8.1.2 Scattering parameters for amplifier a
Table 9: Scattering parameters for amplifier a
VDS(a) = 5 V; VG2-S = 4 V; ID(a) = 19 mA; VDS(b) = 0 V; VG-1S(b) = 0 V; Tamb = 25 °C.
f
(MHz)
S11
Magnitude
ratio
Angle
(deg)
S21
Magnitude
ratio
Angle
(deg)
S12
Magnitude
ratio
Angle
(deg)
S22
Magnitude
ratio
50
0.992
−3.91 3.07
175.56 0.0007
83.61 0.992
100 0.990
−7.76 3.06
171.18 0.0017
83.19 0.992
200 0.982
−15.42 3.04
162.42 0.0026
78.19 0.990
300 0.971
−22.99 3.01
153.79 0.0037
73.75 0.988
400 0.956
−30.52 2.96
145.22 0.0047
69.82 0.985
500 0.938
−37.83 2.90
136.78 0.0055
66.12 0.982
600 0.917
−45.14 2.83
128.46 0.0061
62.11 0.979
700 0.893
−52.31 2.76
120.20 0.0065
58.86 0.975
800 0.867
−59.47 2.69
111.98 0.0068
58.28 0.972
900 0.838
−66.23 2.60
103.90 0.0067
50.64 0.968
1000 0.807
−73.10 2.52
95.875 0.0065
47.28 0.966
Angle
(deg)
−1.47
−2.93
−5.84
−8.71
−11.59
−14.48
−17.31
−20.14
−22.98
−25.85
−28.74
8.1.3 Noise data for amplifier a
Table 10: Noise data for amplifier a
VDS(a) = 5 V; VG2-S = 4 V; ID(a) = 19 mA; VDS(b) = 0 V; VG-1S(b) = 0 V; Tamb = 25 °C.
f
(MHz)
Fmin
(dB)
Γopt
ratio
rn
(deg)
(Ω)
400
1.3
0.718
16.06
0.683
800
1.4
0.677
37.59
0.681
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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