BF1205C 데이터 시트보기 (PDF) - Philips Electronics
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BF1205C Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
40
yfs
(mS)
30
001aaa556
(1)
(2)
20
(3)
10
0
0
(4)
(5)
(6)
8
16
24
32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
VDS(a) = 5 V; VG1-S(b) = VDS(b) = 0 V; Tj = 25 °C.
Fig 6. Forward transfer admittance as a function of
drain current; typical values.
20
ID (a)
(mA)
16
001aaa557
12
8
4
0
0
20
40
60
ID (b) (µA)
VDS(a) = 5 V; VG2-S = 4 V; VDS(b) = 5 V;
VG1-S(b) = 0 V; Tj = 25 °C.
Fig 7. Drain current as a function of internal G1
current (current in pin drain (b) if MOS-FET (b)
is switched off); typical values.
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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