BF1205C 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BF1205C Datasheet PDF : 22 Pages
| |||
Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
20
ID
(mA)
16
001aaa558
12
8
4
0
0
1
2
3
4
5
Vsupply (V)
VDS(a) = VDS(b) = Vsupply, VG2-S = 4 V, Tj = 25 °C,
RG1(b) = 150 kΩ (connected to ground); see
Figure 3.
Fig 8. Drain current of amplifier a as a function of
supply voltage of a and b amplifier; typical
values.
32
ID
(mA)
24
16
8
001aaa559
(1)
(2)
(3)
(4)
(5)
(6)
0
0
2
4
6
VG2-S (V)
(1) VDS(b) = 5 V.
(2) VDS(b) = 4.5 V.
(3) VDS(b) = 4 V.
(4) VDS(b) = 3.5 V.
(5) VDS(b) = 3 V.
(6) VDS(b) = 2.5 V.
VDS(a) = 5 V; VG1-S(b) = 0 V; gate 1 (a) = open;
Tj = 25 °C.
Fig 9. Drain current as a function of gate 2 and drain
supply voltage; typical values.
120
Vunw
(dBµV)
110
100
90
001aaa560
0
gain
reduction
(dB)
10
20
30
40
001aaa561
80
0
10
20
30
40
50
gain reduction (dB)
50
0
1
2
3
4
VAGC (V)
VDS(a) = VDS(b) = 5 V; VG1-S(b) = 0 V; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 33.
Fig 10. Unwanted voltage for 1% cross-modulation as a
function of gain reduction; typical values.
VDS(a) = VDS(b) = 5 V; VG1-S(b) = 0 V; f = 50 MHz; see
Figure 33.
Fig 11. Gain reduction as a function of AGC voltage;
typical values.
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8 of 22
Share Link: 