BF1212WR 데이터 시트보기 (PDF) - Philips Electronics
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BF1212WR Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 µH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 °C
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1 000
s11
MAGNITUDE
(ratio)
0.990
0.988
0.983
0.974
0.969
0.958
0.947
0.936
0.924
0.910
0.896
ANGLE
(deg)
−3.39
−6.76
−13.40
−19.86
−26.46
−32.73
−38.83
−44.75
−50.51
−56.18
−61.64
s21
MAGNITUDE
(ratio)
3.288
3.280
3.261
3.218
3.205
3.141
3.086
3.017
2.949
2.870
2.785
ANGLE
(deg)
176.5
173.0
166.1
159.0
152.6
145.9
139.5
133.1
126.9
120.5
114.7
s12
MAGNITUDE
(ratio)
0.0005
0.0011
0.0021
0.0030
0.0039
0.0045
0.0049
0.0051
0.0051
0.0049
0.0045
ANGLE
(deg)
86.9
85.6
81.2
77.5
74.6
72.4
70.9
69.5
69.9
69.8
72.7
s22
MAGNITUDE
(ratio)
0.990
0.990
0.991
0.991
0.994
0.994
0.993
0.991
0.981
0.984
0.980
ANGLE
(deg)
−1.66
−3.30
−6.62
−9.92
−13.30
−16.56
−19.77
−22.78
−25.77
−28.72
−31.77
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 °C
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
400
0.9
0.695
800
1.1
0.634
(deg)
13.87
30.30
Rn
(Ω)
28.5
32.85
2003 Nov 14
10
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