BF1212WR 데이터 시트보기 (PDF) - Philips Electronics

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BF1212WR

N-channel dual-gate PoLo MOS-FETs

Philips Electronics 

Philips Semiconductors

N-channel dual-gate MOS-FETs

Product specification

BF1212; BF1212R; BF1212WR

250

handbook, halfpage

Ptot

(mW)

200

150

100

50

0

0

50

MDB828

(2)

(1)

100

150 Ts (°C) 200

(1) BF1212WR.

(2) BF1212; BF1212R.

Fig.4 Power derating curve.

STATIC CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

V(BR)DSS drain-source breakdown voltage

V(BR)G1-SS gate 1-source breakdown voltage

V(BR)G2-SS gate 2-source breakdown voltage

V(F)S-G1 forward source-gate 1 voltage

V(F)S-G2 forward source-gate 2 voltage

VG1-S(th) gate 1-source threshold voltage

VG2-S(th) gate 2-source threshold voltage

IDSX

drain-source current

IG1-S

IG2-S

gate 1 cut-off current

gate 2 cut-off current

Note

1. RG1 connects G1 to VGG = 5 V.

CONDITIONS

VG1-S = VG2-S = 0 V; ID = 10 µA

VG2-S = VDS = 0 V; IG1-S = 10 mA

VG1-S = VDS = 0 V; IG2-S = 10 mA

VG2-S = VDS = 0 V; IS-G1 = 10 mA

VG1-S = VDS = 0 V; IS-G2 = 10 mA

VG2-S = 4 V; VDS = 5 V; ID = 100 µA

VG1-S = 5 V; VDS = 5 V; ID = 100 µA

VG2-S = 4 V; VDS = 5 V; RG1 = 150 kΩ;

note 1

VG2-S = VDS = 0 V; VG1-S = 5 V

VG1-S = VDS = 0 V; VG2-S = 4 V

MIN.

6

6

6

0.5

0.5

0.3

0.35

8

MAX. UNIT

−

V

10

V

10

V

1.5 V

1.5 V

1.0 V

1.0 V

16

mA

−

50

nA

−

20

nA

2003 Nov 14

4

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