BF1212WR 데이터 시트보기 (PDF) - Philips Electronics
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BF1212WR Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
30
handbook, halfpage
ID
(mA)
20
MLE233
(1)
(4)
(2)
(3)
(5)
(6)
10
(7)
0
0
0.5
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
1
1.5
2
2.5
VG1-S (V)
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS = 5 V.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
handbook,3h2alfpage
ID
(mA)
24
16
8
0
0
2
MLE234
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
4
6
VDS (V)
(1) VG1-S = 1.6 V.
(2) VG1-S = 1.5 V.
(3) VG1-S = 1.4 V.
(4) VG1-S = 1.3 V.
(5) VG1-S = 1.2 V.
(6) VG1-S = 1.1 V.
(7) VG1-S = 1.0 V.
(8) VG1-S = 0.9 V.
(9) VG1-S = 0.8 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.6 Output characteristics; typical values.
handboo1k,0h0alfpage
IG1
(µA)
80
60
40
MLE235
(1) (2)
(3)
(4)
(5)
20
(6)
(7)
0
0
0.5
1
1.5
2
VG1-S (V)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS = 5 V.
Tj = 25 °C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
2003 Nov 14
handbook,4h0alfpage
yfs
(mS)
30
MLE236
(3) (2) (1)
(4)
(5)
20
(6)
10
(7)
0
0
4
8
12
16
20
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS = 5 V.
Tj = 25 °C.
Fig.8 Forward transfer admittance as a function
of drain current; typical values.
6
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