BF256B 데이터 시트보기 (PDF) - Fairchild Semiconductor

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BF256B

N-Channel RF Amplifiers

Fairchild Semiconductor 

November 2014

BF256B

N-Channel RF Amplifiers

Features

• This device is designed for VHF / UHF amplifiers

• Sourced from process 50

1

TO-92

1. Gate 2. Source 3. Drain

Ordering Information

Part Number

BF256B

Top Mark

BF256B

Package

TO-92 3L

Packing Method

Bulk

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VDG

VGS

IGF

TJ, TSTG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Temperature Range

30

V

-30

V

10

mA

-55 to 150

°C

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

PD

Total Device Dissipation at TA = 25°C

Derate Above 25°C

Value

350

2.8

Unit

mW

mW/°C

© 2003 Fairchild Semiconductor Corporation

BF256B Rev. 1.1.0

www.fairchildsemi.com

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