BF1212WR 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1212WR Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 μH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 C
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.990
3.39
3.288
176.5
0.0005
86.9
100
0.988
6.76
3.280
173.0
0.0011
85.6
200
0.983
13.40
3.261
166.1
0.0021
81.2
300
0.974
19.86
3.218
159.0
0.0030
77.5
400
0.969
26.46
3.205
152.6
0.0039
74.6
500
0.958
32.73
3.141
145.9
0.0045
72.4
600
0.947
38.83
3.086
139.5
0.0049
70.9
700
0.936
44.75
3.017
133.1
0.0051
69.5
800
0.924
50.51
2.949
126.9
0.0051
69.9
900
0.910
56.18
2.870
120.5
0.0049
69.8
1 000
0.896
61.64
2.785
114.7
0.0045
72.7
s22
MAGNITUDE
(ratio)
0.990
0.990
0.991
0.991
0.994
0.994
0.993
0.991
0.981
0.984
0.980
ANGLE
(deg)
1.66
3.30
6.62
9.92
13.30
16.56
19.77
22.78
25.77
28.72
31.77
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 C
f
(MHz)
Fmin
(dB)
opt
(ratio)
400
0.9
0.695
800
1.1
0.634
(deg)
13.87
30.30
Rn
()
28.5
32.85
2003 Nov 14
10
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