BF450 데이터 시트보기 (PDF) - Philips Electronics
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BF450 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium frequency transistor
Product specification
BF450
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tamb = 150 °C
IEBO
emitter cut-off current
IC = 0; VEB = −3 V
hFE
DC current gain
IC = −1 mA; VCE = −10 V
VBE
base-emitter voltage
IC = −1 mA; VCE = −10 V
Cre
feedback capacitance IC = 0; VCB = −10 V; f = 1 MHz
fT
transition frequency
IC = −1 mA; VCE = −10 V; f = 100 MHz
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−40
−40
−4
−25
−25
300
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
VALUE
420
UNIT
K/W
MIN.
−
−
−
50
−680
−
350
MAX.
−50
−4
−100
−
−780
0.55
−
UNIT
nA
µA
nA
mV
pF
MHz
1997 Jul 11
3
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