BF824W 데이터 시트보기 (PDF) - Philips Electronics
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BF824W Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium frequency transistor
Product specification
BF824W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Crb
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −4 V
IC = −1 mA; VCE = −10 V
IC = −4 mA; VCE = −10 V
IC = −4 mA; VCE = −10 V
IC = 0; VCE = −10 V; f = 1 MHz
VCE = −10 V; f = 100 MHz; note 1
IC = −1 mA
IC = −4 mA
IC = −8 mA
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
25
25
−
−
MAX.
−50
−10
−100
−
−
−900
0.3
UNIT
nA
µA
nA
mV
pF
250
−
400
−
390
−
MHz
MHz
MHz
1999 Apr 15
3
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