BF995(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors

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BF995
(Rev.:1999)

N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Vishay Semiconductors 

BF995

Vishay Telefunken

N–Channel Dual Gate MOS-Fieldeffect Tetrode,

Depletion Mode

Electrostatic sensitive device.

Observe precautions for handling.

Applications

Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Features

D Integrated gate protection diodes

D High cross modulation performance

D Low noise figure

D High AGC-range

D Low feedback capacitance

21

G2

D

94 9279

G1

13 579

3

4

BF995 Marking: MB

Plastic case (SOT 143)

12623

S

1=Source, 2=Drain, 3=Gate 2, 4=Gate 1

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Drain - source voltage

Drain current

Gate 1/Gate 2 - source peak current

Total power dissipation

Channel temperature

Tamb ≤ 60 °C

Storage temperature range

Type

Symbol

Value

Unit

VDS

20

V

ID

30

mA

±IG1/G2SM

10

mA

Ptot

200

mW

TCh

150

°C

Tstg –55 to +150 °C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3

RthChA

450

K/W

plated with 35mm Cu

Document Number 85009

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

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