BF995A 데이터 시트보기 (PDF) - Vishay Semiconductors
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BF995A Datasheet PDF : 8 Pages
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BF995
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Type
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown
ID = 10 µA, - VG1S = - VG2S = 4 V
V(BR)DS
20
V
voltage
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR)G1SS
8
14
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
8
14
V
Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
100
nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
100
nA
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V BF995
IDSS
4
18
mA
BF995A
IDSS
4
10.5
mA
BF995B
IDSS
9.5
18
mA
Gate 1 - source cut-off voltage
VDS = 15 V, VG2S = 4 V,
ID = 20 µA
- VG1S(OFF)
3.5
V
Gate 2 - source cut-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA
- VG2S(OFF)
3.5
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y21s|
12
15
mS
Gate 1 input capacitance
Cissg1
3.7
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Cissg2
1.6
pF
Feedback capacitance
Crss
25
fF
Output capacitance
Coss
1.6
pF
Power gain
GS = 2 mS, GL = 0.5 mS,
Gps
20
dB
f = 200 MHz
AGC range
VG2S = 4 to -2 V, f = 200 MHz
ΔGps
50
dB
Noise figure
GS = 2 mS, GL = 0.5 mS,
F
f = 200 MHz
1.8
2.5
dB
www.vishay.com
2
Document Number 85009
Rev. 1.6, 02-Feb-06
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