BF998 데이터 시트보기 (PDF) - Vishay Semiconductors
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BF998 Datasheet PDF : 10 Pages
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BF998/BF998R/BF998RW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Tamb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
VDS
12
V
ID
30
mA
± IG1/G2SM
10
mA
± VG1S/G2S
7
V
Ptot
200
mW
TCh
150
°C
Tstg
- 65 to + 150
°C
Thermal Characteristics
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min. Typ. Max. Unit
Drain - source breakdown
voltage
ID = 10 μA, - VG1S = - VG2S = 4 V
V(BR)DS
12
V
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR)G1SS
7
14
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
7
14
V
Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
50
nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
50
nA
BF998/
BF998R/
IDSS
4
BF998RW
18
mA
Drain current
VDS = 8 V, VG1S = 0, VG2S = 4 V BF998A/
BF998RA/
IDSS
4
BF998RAW
10.5
mA
BF998RBW
IDSS
9.5
18
mA
Gate 1 - source cut-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 μA
- VG1S(OFF)
1.0
2.0
V
Gate 2 - source cut-off voltage VDS = 8 V, VG1S = 0, ID = 20 μA
- VG2S(OFF)
0.6
1.0
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward transadmittance
|y21s|
21
24
mS
Gate 1 input capacitance
Cissg1
2.1
2.5
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Cissg2
1.1
pF
Feedback capacitance
Crss
25
fF
Output capacitance
Coss
1.05
pF
www.vishay.com
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Document Number 85011
Rev. 1.8, 05-Sep-08
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