BFG16 데이터 시트보기 (PDF) - Philips Electronics
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BFG16 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFG16A
FEATURES
• High power gain
• Good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope.
It is primarily intended for use in
wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
fpage
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
fT
GUM
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
open emitter
open base
up to Ts = 110 °C; note 1
IC = 150 mA; VCE = 5 V; Tj = 25 °C
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
25
−
−
TYP.
−
−
−
−
80
1.5
10
MAX. UNIT
40
V
25
V
150 mA
1
W
−
−
GHz
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 110 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
40
V
25
V
2
V
150 mA
1
W
+150 °C
150 °C
1995 Sep 12
2
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