BFG16 데이터 시트보기 (PDF) - Philips Electronics
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BFG16 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFG16A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction up to Ts = 110 °C; note 1
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
VALUE
40
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
Cc
Ce
Cre
fT
GUM
PARAMETER
CONDITIONS
collector-base breakdown
voltage
open emitter; IC = 0.1 mA
collector-emitter breakdown
voltage
open base; IC = 10 mA
emitter-base breakdown voltage open collector; IE = 0.1 mA
collector cut-off current
IE = 0; VCB = 28 V
DC current gain
IC = 150 mA; VCE = 5 V
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
note 1
f = 500 MHz; Tamb = 25 °C
MIN. TYP. MAX. UNIT
25
−
−
V
18
−
−
V
3
−
−
V
−
−
20
µA
25
80
−
−
2.5 −
pF
−
10.0 −
pF
−
1.5 −
pF
−
1.5 −
GHz
−
10
−
dB
Note
1. GUM is the maximum unilateral power gain, assuming
s12
is zero.
GUM
=
10
log -(---1-----–------s---1--1-----2s--)-2---1-(--1-2----–------s---2---2----2---)--
dB.
1995 Sep 12
3
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