BFP196 데이터 시트보기 (PDF) - Siemens AG

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BFP196

NPN Silicon RF Transistor

Siemens AG 

BFP 196

NPN Silicon RF Transistor

• For low noise, low distortion broadband

amplifiers in antenna and telecommunications

systems up to 1.5GHz at collector currents from

20mA to 80mA

• Power amplifier for DECT and PCN systems

• fT = 7.5GHz

F = 1.5 dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

BFP 196 RIs

Q62702-F1320

1=C 2=E 3=B 4=E

Package

SOT-143

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 77 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

1) TS is measured on the collector lead at the soldering point to the pcb.

Values

12

20

20

2

100

12

700

150

- 65 ... + 150

- 65 ... + 150

≤ 105

Unit

V

mA

mW

°C

K/W

Semiconductor Group

1

Dec-13-1996

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