BFP420F 데이터 시트보기 (PDF) - Infineon Technologies

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BFP420F

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

2

Features

• General purpose low noise NPN bipolar RF transistor

• Based on Infineon´s reliable very high volume 25 GHz

silicon bipolar technology

• 0.95 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA

• 16.5 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA

• 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA

• 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA

• Popular in discrete oscillators

• Thin, small, flat, Pb-free (RoHS compliant) and Halogen-free

package with visible leads

• Qualification report according to AEC-Q101 available

BFP420F

Features

Applications

As Low Noise Amplifier (LNA) in

• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)

• Multimedia applications such as mobile/portable TV, CATV, FM Radio

• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

As discrete active mixer in RF Frontends

As active device in discrete oscillators

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Product Name

BFP420F

Package

TSFP-4-1

1=B

Pin Configuration

2=E

3=C

4=E

Marking

AMs

Data Sheet

8

Revision 1.1, 2012-11-07

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