BFP460 데이터 시트보기 (PDF) - Infineon Technologies
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BFP460 Datasheet PDF : 15 Pages
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BFP460
Surface mount wideband silicon NPN RF bipolar transistor
Product description
The BFP460 is a low noise device based on a grounded emitter (SIEGET™) that is part of
Infineon’s established fourth generation RF bipolar transistor family. Its transition
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low current and high robustness characteristics make
It remains cost competitive without compromising on
the device
ease of
use.
Feature list
• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 5 mA
• High gain Gms = 17.5 dB at 1.8 GHz, 3 V, 20 mA
• OIP3 = 27.5 dBm at 1.8 GHz, 3 V, 20 mA
• High ESD robustness, typical 1.5 kV (HBM)
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
• Amplifier for remote keyless entry (RKE)
• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
• LNAs for sub-1 GHz ISM band applications
Device information
Table 1
Part information
Product name / Ordering code
BFP460 / BFP460H6327XTSA1
BFP460 / BFP460H6433XTMA1
Package
SOT343
Pin configuration
Marking
1 = E 2 = C 3 = E 4 = B ABs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Pieces / Reel
3000
10000
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 2.0
2019-01-25
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