BFN22 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BFN22

High Voltage Transistors

Diotec Semiconductor Germany  

BFN 22

NPN

High Voltage Transistors

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

NPN

Dimensions / Maße in mm

1=B 2=E 3=C

Power dissipation – Verlustleistung

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

250 mW

SOT-23

(TO-236)

0.01 g

Maximum ratings (TA = 25/C)

Collector-Emitter-voltage

B open

VCE0

Collector-Base-voltage

Collector-Emitter-voltage

E open

RBE = 2.7 kS

VCB0

VCER

Emitter-Base-voltage

C open

VEB0

Power dissipation – Verlustleistung

Ptot

Collector current – Kollektorstrom (dc)

IC

Peak Collector current – Kollektor-Spitzenstrom ICM

Junction temperature – Sperrschichttemperatur Tj

Storage temperature – Lagerungstemperatur

TS

Grenzwerte (TA = 25/C)

BFN 22

250 V

250 V

250 V

5V

250 mW 1)

50 mA

100 mA

150/C

- 65…+ 150/C

Characteristics (Tj = 25/C)

Collector-Base cutoff current – Kollektorreststrom

IE = 0, VCB = 200 V

ICB0

IE = 0, VCB = 200 V, Tj = 150/C

ICB0

Emitter-Base cutoff current – Emitterreststrom

IC = 0, VEB = 5 V

IEB0

Collector saturation volt. – Kollektor-Sättigungsspg. 2)

IC = 10 mA, IB = 1 mA

VCEsat

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

–

–

100 nA

–

–

20 :A

–

–

100 nA

–

–

500 mV

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

6

01.11.2003

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