BFR193TF 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFR193TF Datasheet PDF : 4 Pages
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Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Transition frequency
VCE = 8 V, IC = 50 mA,
fT
f = 1 GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
Collector-emitter capacitance VCE = 10 V, f = 1 MHz
Cce
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
Noise figure
VCE = 8 V, IC = 10 mA,
F
ZS = ZSopt, ZL = 50 Ω,
f = 900 MHz
F
Power gain
VCE = 8 V, IC = 30 mA,
Gpe
ZS = ZSopt, ZL = 50 Ω,
f = 900 MHz
VCE = 8 V, IC = 30 mA,
Gpe
ZS = ZSopt, ZL = 50 Ω,
f = 2 GHz
Transducer gain
VCE = 8 V, IC = 30 mA,
f = 900 MHz, ZO = 50 Ω
|S21e|2
VCE = 8 V, IC = 30 mA, f = 2 GHz,
ZO = 50 Ω
|S21e|2
Third order intercept point
VCE = 8 V, IC = 50 mA,
IP3
f = 900 MHz
Package Dimensions in mm
BFR193TF
Vishay Semiconductors
Typ.
Max
Unit
7.5
GHz
0.6
pF
0.25
pF
1.6
pF
1.2
dB
2.1
dB
15.5
dB
9.5
dB
14
dB
7.5
dB
34
dBm
1.5 (0.059)
1.7 (0.066)
ISO Method E
3 x 0.20 (0.008)
3 x 0.30 (0.012)
0.1 B
0.1 A
1.5 (0.059)
1.7 (0.066)
0.4 (0.016)
0.65(0.026)
1.15( 0.045)
16866
0.5 (0.016)
1.0 (0.039)
0.5 (0.016)
Document Number 85103
Rev. 1.3, 28-Apr-05
www.vishay.com
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