BFR182(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFR182
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR182

Power Gain Gma, Gms = f(VCE):_____

|S21|2 = f(VCE):---------

f = Parameter

20

IC=10mA

dB

0.9GHz

16

0.9GHz

14

12

1.8GHz

10

1.8GHz

8

Intermodulation Intercept Point IP3=f(IC)

(3rd order, Output, ZS=ZL=50 )

VCE = Parameter, f = 900MHz

30

8V

dBm

5V

3V

20

2V

15

1V

10

5

6

0

2

4

6

8

Power Gain Gma, Gms = f(f)

V

12

VCE

0

0

5

10

15

Power Gain |S21|2= f(f)

V

25

IC

VCE = Parameter

32

dB IC=10mA

28

26

24

22

20

18

16

14

12

10

8

10V

1V

6

0.7V

4

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

VCE = Parameter

28

dB IC=10mA

24

22

20

18

16

14

12

10

8

6

10V

4

1V

2

0.7V

0

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

7

Aug-09-2001

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