BGE788C 데이터 시트보기 (PDF) - NXP Semiconductors.
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BGE788C Datasheet PDF : 8 Pages
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NXP Semiconductors
BGE788C
750 MHz, 34 dB gain push-pull amplifier
5. Characteristics
Table 5. Characteristics
Bandwidth 40 MHz to 750 MHz; VB = 24 V; Tmb = 30 C; ZS = ZL = 75 .
Symbol Parameter
Conditions
Gp
power gain
f = 50 MHz
f = 750 MHz
SL
slope cable equivalent
f = 40 MHz to 750 MHz
FL
flatness of frequency response f = 40 MHz to 750 MHz
s112
input return losses
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
s222
output return losses
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
s21
CTB
phase response
composite triple beat
f = 50 MHz
110 channels flat;
Vo = 44 dBmV;
measured at 745.25 MHz
CSO
composite second order
distortion
110 channels flat;
Vo = 44 dBmV;
measured at 746.5 MHz
NF
noise figure
f = 50 MHz
Itot
total current consumption
Min Typ
33.2 -
33.5 -
0.3
-
-
-
16
-
15
-
14
-
16
-
15
-
14
-
135 -
-
-
-
-
-
-
[1] 285
-
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
Max Unit
35.2 dB
-
dB
2.3
dB
0.6 dB
-
dB
-
dB
-
dB
-
dB
-
dB
-
dB
225 deg
49 dB
52 dB
8
dB
325 mA
BGE788C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 September 2011
© NXP B.V. 2011. All rights reserved.
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