Philips Semiconductors
power amplifier with integrated control loop for
GSM850, EGSM900, DCS1800 & PCS1900
Preliminary specification
BGY284
ELECTRICAL CHARACTERISTICS GSM850 AND EGSM900 TRANSMIT MODE
ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; 1 : 8 ≤ δ ≤ 4 : 8; 575 ≤ tp ≤ 2300 µs; PD LB = 0 dBm;
spurious on PD LB < −50 dBm; LB TX mode selected;
f = 824 to 849 MHz for GSM850; f = 880 to 915 MHz for EGSM900;unless otherwise specified.
SYMBOL
PARAMETER
PD LB
VDAC
RF input power
reference voltage
to set output power
PL LB
available output power
η
efficiency GSM850
efficiency EGSM900
∆PL LB
output power variation at
nominal temperature
output power variation at
extreme temperature
H2 to H13
output power variation vs
frequency
harmonics
isolation H2 into
DCS1800/PCS1900
isolation H3 into
DCS1800/PCS1900
isolation
VSWRin
VSWRin
input VSWR
input VSWR
CONDITIONS
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
PL LB = 35 dBm
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
PL LB = 5 dBm
VDAC = 2.2 V
VDAC = 2.2 V; VBAT = 3.2 V;
PD LB = −2 dBm; Tmb = 85 °C
saturated power
PL LB = 34 dBm
saturated power
PL LB = 34 dBm
VDAC set to have 31 ≤ PL LB ≤ 34 dBm;
see note 1 and 2
VDAC set to have 13 ≤ PL LB ≤ 31 dBm
see note 1 and 2
VDAC set to have 7 ≤ PL LB ≤ 13 dBm
see note 1 and 2
VDAC set to have 31 ≤ PL LB ≤ 34 dBm
see note 1 and 3
VDAC set to have 13 ≤ PL LB ≤ 31 dBm;
see note 1 and 3
VDAC set to have 7 ≤ PL LB ≤ 13 dBm;
see note 1 and 3
VDAC set to have 31 ≤ PL LB ≤ 34 dBm;
see note 1 and 4
PL LB ≤ 34 dBm
measured at RFout HB; PL LB = 34 dBm
measured at RFout HB; PL LB = 34 dBm
PD LB = 2 dBm; VDAC = 0.15 V;
standby mode
PD LB = 2 dBm; VDAC = 0.15 V;
LB TX mode
PL LB < 5 dBm
5 ≤ PL LB ≤ 34 dBm;
MIN.
−2
−
TYP.
0
−
MAX.
+2
2
UNIT
dBm
V
0.2 −
−
V
35.2 36
34.1 −
−
55
−
50
−
50
−
45
−1
−
−1.5 −
−3
−
−1.5 −
−2
−
−4
−
−0.3 −
−
−
−
−
−
−
−
−
−
−
−
−
−
2:1
−
dBm
−
dBm
−
%
−
%
−
%
−
%
1
dB
1.5 dB
2
dB
1.5 dB
2
dB
3
dB
0.3 dB
−5
dBm
−15 dBm
−25 dBm
−36 dBm
−36 dBm
6:1
3:1
2003 Aug 20
10