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BGY284 데이터 시트보기 (PDF) - Philips Electronics

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BGY284 Datasheet PDF : 23 Pages
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Philips Semiconductors
power amplifier with integrated control loop for
GSM850, EGSM900, DCS1800 & PCS1900
Preliminary specification
BGY284
ELECTRICAL CHARACTERISTICS GSM850 AND EGSM900 TRANSMIT MODE
ZS = ZL = 50 ; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; 1 : 8 ≤ δ ≤ 4 : 8; 575 tp 2300 µs; PD LB = 0 dBm;
spurious on PD LB < 50 dBm; LB TX mode selected;
f = 824 to 849 MHz for GSM850; f = 880 to 915 MHz for EGSM900;unless otherwise specified.
SYMBOL
PARAMETER
PD LB
VDAC
RF input power
reference voltage
to set output power
PL LB
available output power
η
efficiency GSM850
efficiency EGSM900
PL LB
output power variation at
nominal temperature
output power variation at
extreme temperature
H2 to H13
output power variation vs
frequency
harmonics
isolation H2 into
DCS1800/PCS1900
isolation H3 into
DCS1800/PCS1900
isolation
VSWRin
VSWRin
input VSWR
input VSWR
CONDITIONS
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
PL LB = 35 dBm
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
PL LB = 5 dBm
VDAC = 2.2 V
VDAC = 2.2 V; VBAT = 3.2 V;
PD LB = 2 dBm; Tmb = 85 °C
saturated power
PL LB = 34 dBm
saturated power
PL LB = 34 dBm
VDAC set to have 31 PL LB 34 dBm;
see note 1 and 2
VDAC set to have 13 PL LB 31 dBm
see note 1 and 2
VDAC set to have 7 PL LB 13 dBm
see note 1 and 2
VDAC set to have 31 PL LB 34 dBm
see note 1 and 3
VDAC set to have 13 PL LB 31 dBm;
see note 1 and 3
VDAC set to have 7 PL LB 13 dBm;
see note 1 and 3
VDAC set to have 31 PL LB 34 dBm;
see note 1 and 4
PL LB 34 dBm
measured at RFout HB; PL LB = 34 dBm
measured at RFout HB; PL LB = 34 dBm
PD LB = 2 dBm; VDAC = 0.15 V;
standby mode
PD LB = 2 dBm; VDAC = 0.15 V;
LB TX mode
PL LB < 5 dBm
5 PL LB 34 dBm;
MIN.
2
TYP.
0
MAX.
+2
2
UNIT
dBm
V
0.2
V
35.2 36
34.1
55
50
50
45
1
1.5
3
1.5
2
4
0.3
2:1
dBm
dBm
%
%
%
%
1
dB
1.5 dB
2
dB
1.5 dB
2
dB
3
dB
0.3 dB
5
dBm
15 dBm
25 dBm
36 dBm
36 dBm
6:1
3:1
2003 Aug 20
10

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