BGY284 데이터 시트보기 (PDF) - Philips Electronics
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BGY284
Philips Electronics
BGY284 Datasheet PDF : 23 Pages
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Philips Semiconductors
power amplifier with integrated control loop for
GSM850, EGSM900, DCS1800 & PCS1900
Preliminary specification
BGY284
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Pn
CG
SSG
AM/AM
AM/PM
tr , tf
fCL
noise power
conversion gain
small signal gain
AM/AM conversion
AM/PM conversion
maximum control slope
carrier rise and fall time
control loop bandwidth
stability
ruggedness
RBW = 100 kHz;
f0 = 897.5 MHz for EGSM900;
f0 = 836.5 MHz for GSM850;
f0 + 10 MHz; PL LB < 34 dBm;
−
f0 + 20 MHz; PL LB < 34 dBm;
−
f ≥ 1805 MHz; PL LB < 34 dBm;
−
f0 = 915 MHz for EGSM900;
−
f0 = 849 MHz for GSM850;
5 ≤ PL LB ≤ 34 dBm;
fSS1 = f0 − 20 MHz; PSS1 = −40 dBm;
CG = PL CON − PSS1;
see fig. 4
f0 = 915 MHz for EGSM900;
−
f0 = 849 MHz for GSM850;
5 ≤ PL LB ≤ 34 dBm;
fSS2 = f0 + 20 MHz; PSS2 = −40 dBm;
SSG = PL SS2 − PSS2;
see fig. 5
5 ≤ PL LB ≤ 34 dBm;6.5 % AM modulation −
with fmod = 67 kHz at RFin LB
5 ≤ PL LB ≤ 34 dBm;6.5 % AM modulation −
with fmod = 140 kHz at RFin LB
5 ≤ PL LB ≤ 34 dBm;6.5 % AM modulation −
with fmod = 271 kHz at RFin LB
−0.5 ≤ PD LB ≤ 0.5 dBm;
−
5 ≤ PL LB ≤ 34 dBm
5 ≤ PL LB ≤ 34 dBm
−
PL LB 5 dBm to 34 dBm or vice versa
−
−
PL LB ≤ 34 dBm; VSWR ≤ 8 : 1 through all −
phases; 3.2 ≤ VBAT ≤ 4.6 V
3.2 ≤ VBAT ≤ 4.6 V; PL LB ≤ 34 dBm;
δ = 4 : 8; VSWR ≤ 8 : 1 through all
phases
−
−73
−
−82
−
−77
−
28
−
31
8
12
12
15
18
20
−
4
−
250
−
2
200 −
−
−36
no degradation
dBm
dBm
dBm
dB
dB
%
%
%
deg/dB
dB/V
µs
kHz
dBm
Note
1. Condition to set VDAC: VBAT = 3.6 V; δ = 2 : 8; PD LB = 0 dBm; Tmb = 25 °C; f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850
2. Conditions for power variation: −2 ≤ PD LB ≤ +2 dBm; f = 824 to 849 MHz for GSM850;
f = 880 to 915 MHz for EGSM900; 15 ≤ Tmb ≤ 70 °C; 3.2 ≤ VBAT ≤ 4.2 V; VSTAB = 2.8 V ± 10 mV
3. Conditions for power variation: −2 ≤ PD LB ≤ +2 dBm; f = 824 to 849 MHz for GSM850;
f = 880 to 915 MHz for EGSM900; −10 ≤ Tmb ≤ 90 °C; 3.2 ≤ VBAT ≤ 4.2 V; VSTAB = 2.8 V ± 10 mV
4. Conditions for power variation: PD LB = 0 dBm; f = 824 to 849 MHz for GSM850;
f = 880 to 915 MHz for EGSM900; Tmb = 25 °C; VBAT = 3.6 V; VSTAB = 2.8 V ± 10 mV
2003 Aug 20
11
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