BGY284 데이터 시트보기 (PDF) - Philips Electronics
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BGY284
Philips Electronics
BGY284 Datasheet PDF : 23 Pages
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Philips Semiconductors
power amplifier with integrated control loop for
GSM850, EGSM900, DCS1800 & PCS1900
Preliminary specification
BGY284
DC CHARACTERISTICS
ZS = ZL = 50 Ω; PD HB, LB = 0 mW; VBAT = 3.5 V; VSTAB = 2.8 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VOLTAGE SUPPLY
VBAT
battery supply voltage
Note 1
typical oprating range
2.9 −
3.1 V
3.1 3.6 4.6 V
IBAT
leakage current
Note 2
standby mode
idle mode
4.6 −
−
−
−
−
5.2 V
25
µA
10
µA
VSTAB
supply voltage
standby, HB TX or LB TX mode
idle mode
2.6 2.8 3.0 V
0
−
0.2 V
ISTAB
current consumption
HB TX or LB TX mode
standby mode
−
−
1
mA
−
−
10
µA
ZS = ZL = 50 Ω; −3 ≤ PD HB,LB ≤ 3 dBm; 3.1 ≤ VBAT ≤ 4.6 V; 2.6 ≤ VSTAB ≤ 3.0 V; −20 ≤ Tmb ≤ 85 °C; 1 : 8 ≤ δ ≤ 4 : 8;
unless otherwise specified
DIGITAL INPUTS: V TXon, Vband
Vil
logic low voltage
Vih
logic high voltage
Iil
current at low voltage
Iih
current at high voltage
Ci
input capacitance
ANALOG INPUTS: VDAC
VDAC
power control voltage
IDAC
power control current
CDAC
input capacitance of VDAC
RDAC
input resistance of VDAC
0
−
0.9 −
−
−
−
−
−
4
0.5 V
3
V
3
µA
15
µA
−
pF
0
−
2.5 V
−100 −
−
µA
−
4
−
pF
−
1.2 −
MΩ
Note
1. PA is functional from 2.9 to 3.1 V, but will not meet all electrical specification points.
2. PA is functional from 4.6 to 5.2 V under 50 Ω conditions, but will not meet all electrical specification points.
2003 Aug 20
9
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