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BGY288

Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900

Philips Electronics 

Philips Semiconductors

BGY288

Power amplifier with integrated control loop

Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode …continued

ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(LB) = 2 dBm; spurious

signals on PD(LB) < −50 dBm; LB TX mode selected;

f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

Pn

noise power

CG

conversion gain

SSG

small signal gain

AM/AM AM/AM conversion

RBW = 100 kHz;

f0 = 897.5 MHz for EGSM900;

f0 = 836.5 MHz for GSM850

f0 + 27.5 MHz; PL(LB) < 34 dBm

f0 + 37.5 MHz; PL(LB) < 34 dBm

f ≥ 1805 MHz; PL(LB) < 34 dBm

f0 = 915 MHz for EGSM900;

f0 = 849 MHz for GSM850;

PL(LB) = 6 dBm to 34 dBm;

fSS1 = f0 − 20 MHz; PSS1 = −40 dBm;

CG = PL(CON) − PSS1; see Figure 4

f0 = 915 MHz for EGSM900;

f0 = 849 MHz for GSM850;

PL(LB) = 6 dBm to 34 dBm;

fSS2 = f0 + 20 MHz; PSS2 = −40 dBm;

SSG = PL(SS2) − PSS2; see Figure 4

PL(LB) = 6 dBm to 34 dBm;

6.5 % AM modulation with

-

-

−73 dBm

-

-

−82 dBm

-

-

−77 dBm

-

-

28 dB

-

-

31 dB

AM/PM AM/PM conversion

maximum control slope

tr, tf

carrier rise and fall time

fmod = 67 kHz at RFI_LB

fmod = 140 kHz at RFI_LB

fmod = 271 kHz at RFI_LB

PD(LB) = 1.5 dBm to 2.5 dBm;

PL(LB) = 6 dBm to 34 dBm

PL(LB) = 6 dBm to 34 dBm

PL(LB) = 5 dBm to 34 dBm or

34 dBm to 5 dBm

-

5

8

%

-

8

13 %

-

14 20 %

-

2

4

deg/dB

-

-

200 dB/V

-

-

2

µs

fCL

control loop bandwidth

-

200 -

kHz

stability

PL(LB) ≤ 34 dBm; VSWR ≤ 7 : 1 through all

phases; VBAT = 3.2 V to 4.6 V

-

-

−36 dBm

ruggedness

VBAT = 3.2 V to 4.6 V; PL(LB) ≤ 34 dBm;

δ = 4 : 8; VSWR ≤ 8 : 1 through all phases

no degradation

[1] Condition to set VPC: VBAT = 3.6 V; δ = 2 : 8; PD(LB) = 2 dBm; Tmb = 25 °C; f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850.

[2] Conditions for power variation: PD(LB) = 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;

Tmb = 15 °C to 70 °C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V ± 20 mV.

[3] Conditions for power variation: PD(LB) = 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;

Tmb = −20 °C to +90 °C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V ± 20 mV.

[4] Conditions for power variation: PD(LB) = 2 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;

Tmb = 25 °C; VBAT = 3.6 V; VSTAB = 2.8 V ± 20 mV.

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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