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BGY288 데이터 시트보기 (PDF) - Philips Electronics

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BGY288 Datasheet PDF : 22 Pages
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Philips Semiconductors
BGY288
Power amplifier with integrated control loop
Table 6: Static characteristics …continued
ZS = ZL = 50 ; PD(HB), PD(LB) = 0 mW; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
ISTAB
current consumption
HB TX or LB TX mode
Standby mode
-
-
1
-
-
1
Digital inputs: TXON, BAND [3]
VIL
LOW-level input voltage
VIH
HIGH-level input voltage
IIL
LOW-level input current
IIH
HIGH-level input current
Ci
input capacitance
Analog inputs: PC [3]
0
-
0.5
1.4
-
3
-
-
3
-
-
15
-
4
-
VPC
power control voltage
IPC
power control current
CPC
PC input capacitance
RPC
PC input resistance
0
-
2.5
100 -
-
-
4
-
-
1.2
-
Unit
mA
mA
V
V
µA
µA
pF
V
µA
pF
M
[1] Power amplifier is functional from 2.9 V to 3.1 V, but will not meet all electrical specification points.
[2] Power amplifier is functional from 4.6 V to 5.2 V under 50 conditions, but will not meet all electrical specification points.
[3] PD(LB) = 0 dBm to 4 dBm / PD(HB) = 2 dBm to +2 dBm; VBAT = 3.1 V to 4.6 V; VSTAB = 2.6 V to 3.0 V; Tmb = 20 °C to +85 °C;
δ = 1 : 8 to 4 : 8; unless otherwise specified.
9. Dynamic characteristics
Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode
ZS = ZL = 50 ; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(LB) = 2 dBm; spurious
signals on PD(LB) < 50 dBm; LB TX mode selected;
f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
PD(LB)
VPC
RF input power
reference voltage to set
output power
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
PL(LB) = 35 dBm
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
PL(LB) = 3 dBm
0
2
4
dBm
-
-
2
V
0.2 -
-
V
9397 750 14011
Preliminary data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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