BLF1049 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BLF1049 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
Base station LDMOS transistor
Product specification
BLF1049
handbook,1h6alfpage
Gp
(dB)
Gp
15
ηD
14
MLE061
40
ηD
(%)
30
20
13
10
12
0
0
10
20
30
40
50
PL (AV)(W)
VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C.
Fig.2 GSM EDGE power gain and efficiency as
functions of load power; typical values.
handbook−,6h2alfpage
ACPR
400
(dBc)
−64
−66
−68
EVM
ACPR400
MLE062
2
EVMrms
(AV)
(%)
1.5
1
0.5
−70
0
0
10
20
30
40
50
PL (AV)(W)
VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C.
Fig.3 GSM EDGE ACPR400 and EVM as
functions of average load power; typical
values.
18
handbook, halfpage
Gp
(dB)
17
16
MLE063 60
ηD
ηD
(%)
40
Gp
20
15
0
0
50
100
150
PL (AV) (W)
VDS = 27 V; f = 920 MHz; IDQ = 1000 mA;
Fig.4 1-tone CW power gain and efficiency as
functions of load power; typical values.
50
handbooηk, halfpage
(%)
40
30
20
10
MLE064
17
gain
(4)
(dB)
16.5
η(1,2,3)
16
(5)
15.5
15
(6)
14.5
0
14
0
50
100
150
PL (PEP) (W)
VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz.
(1) η at Th = −40 °C.
(2) η at Th = 20 °C.
(3) η at Th = 80 °C.
(4) gain at Th = −40 °C.
(5) gain at Th = 20 °C.
(6) gain at Th = 80 °C.
Fig.5 2-tone power gain and efficiency as
functions of load power at different
temperatures.
2003 May 14
4
Share Link: 