BLF1049 데이터 시트보기 (PDF) - Philips Electronics
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BLF1049 Datasheet PDF : 12 Pages
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Philips Semiconductors
Base station LDMOS transistor
Product specification
BLF1049
0
handbook, halfpage
dim
(dBc)
−20
(1)
−40 (4)
−60
(2)
(5)
(6)
(3)
MLE069
−80
0
50
100
150
PL (PEP) (W)
VDS = 27 V; f1 = 920.0 MHz; f2 = 920.1 MHz.
(1) d3; IDQ = 1 A.
(2) d5; IDQ = 1 A.
(3) d7; IDQ = 1 A.
(4) d3; IDQ = 1.3 A.
(5) d5; IDQ = 1.3 A.
(6) d7; IDQ = 1.3 A.
Fig.10 Intermodulation distortion as a function of
peak envelope load power; typical values.
handboZoik, h2alfpage
(Ω)
1.5
1
0.5
0
−0.5
−1
0.85
ri
xi
0.9
MLE070
0.95
1
f (GHz)
Class-AB operation; VDS = 27 V; IDQ = 1125 mA; PL = 35 W.
Values comprised for different parameters.
Fig.11 Input impedance as a function of frequency
(series components); typical values.
handboZokL, h2alfpage
(Ω)
1.5
1
0.5
0
−0.5
−1
0.85
MLE071
RL
XL
0.9
0.95
1
f (GHz)
handbook, halfpage
gate
Z IN
drain
ZL
MGS998
Class-AB operation; VDS = 27 V; IDQ = 1125 mA; PL = 35 W.
Values comprised for different parameters.
Fig.12 Input impedance as a function of frequency
(series components); typical values.
2003 May 14
6
Fig.13 Definition of transistor impedance.
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