BLF573S(2008) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BLF573S
(Rev.:2008)

HF / VHF power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF573S

HF / VHF power LDMOS transistor

2. Pinning information

Table 2.

Pin

1

2

3

Pinning

Description

drain

gate

source

[1] Connected to flange.

3. Ordering information

Simplified outline Graphic symbol

1

1

3

[1]

2

2

3

sym112

Table 3. Ordering information

Type number Package

Name Description

BLF573S

-

earless flanged LDMOST ceramic package, 2 leads

Version

SOT502B

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Tstg

storage temperature

Tj

junction temperature

Min Max Unit

-

110 V

−0.5 +11 V

-

42 A

−65 +150 °C

-

225 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter

Conditions

Typ

Rth(j-c)

thermal resistance from Tcase = 80 °C; PL = 300 W [1] 0.21

junction to case

[1] Rth(j-c) is measured under RF conditions.

Unit

K/W

BLF573S_1

Preliminary data sheet

Rev. 01 — 8 December 2008

© NXP B.V. 2008. All rights reserved.

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