BLW81 데이터 시트보기 (PDF) - Philips Electronics
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BLW81 Datasheet PDF : 11 Pages
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Philips Semiconductors
UHF power transistor
CHARACTERISTICS
Tj = 25 °C
Breakdown voltages
Collector-emitter voltage
VBE = 0; IC = 25 mA
Collector-emitter voltage
open base; IC = 100 mA
Emitter-base voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 17 V
D.C. current gain (1)
IC = 1,25 A; VCE = 5 V
Collector-emitter saturation voltage (1)
IC = 3,75 A; IB = 0,75 A
Transition frequency at f = 500 MHz (1)
IC = 1,25 A; VCE = 12,5 V
IC = 3,75 A; VCE = 12,5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 12,5 V
Feedback capacitance at f = 1 MHz
IC = 100 mA; VCE = 12,5 V
Collector-stud capacitance
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
Product specification
BLW81
V(BR)CES
V(BR)CEO
V(BR)EBO
ICES
hFE
VCEsat
fT
fT
Cc
Cre
Ccs
>
36 V
>
17 V
>
4V
<
10 mA
>
10
typ
35
typ 0,75 V
typ
1,3 GHz
typ
0,9 GHz
typ
34 pF
typ
18 pF
typ
1,2 pF
March 1993
4
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