BLW83 데이터 시트보기 (PDF) - Philips Electronics
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BLW83 Datasheet PDF : 11 Pages
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Philips Semiconductors
HF/VHF power transistor
Product specification
BLW83
List of components in Fig.8:
C1 =
C3 =
C4 =
C5 =
C6 =
C7 =
C9 =
C10 =
C12 =
L1 =
L2 =
L4 =
L5 =
R1 =
R2 =
R3 =
R4 =
R5 =
R6 =
R7 =
R8 =
R9 =
C2 = 10 to 780 pF film dielectric trimmer
22 nF ceramic capacitor (63 V)
47 µF/10 V electrolytic capacitor
56 pF ceramic capacitor (500 V)
47 µF/35 V electrolytic capacitor
C8 = 220 nF polyester capacitor
10 µF/35 V electrolytic capacitor
C11 = 7 to 100 pF film dielectric trimmer
82 pF ceramic capacitor (500 V)
3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads to 2 × 5 mm
L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
600 Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)
15 Ω carbon resistor (±5%; 0,25 W)
1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)
33 Ω carbon resistor (±5%; 0,25 W)
18 Ω carbon resistor (±5%; 0,25 W)
120 Ω wirewound resistor (±5%; 5,5 W)
1 Ω carbon resistor (±5%; 0,125 W)
47 Ω wirewound potentiometer (3 W)
1,57 Ω; parallel connection of 3 × 4,7 Ω wirewound resistors ( 5%; 5,5 W each)
handbook−,2h0alfpage
d3
(dB)
−40
MGP593
IC = 0.8 A 1 A 1.35 A
August 1986
−60
0
5
10 P.E.P. (W) 15
Fig.9 Intermodulation distortion as a function of output power.
Typical values; VCE = 26 V; —— Th = 70 °C; − − − Th = 25 °C.
7
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