BLW83 데이터 시트보기 (PDF) - Philips Electronics
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BLW83 Datasheet PDF : 11 Pages
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Philips Semiconductors
HF/VHF power transistor
Product specification
BLW83
handbook−,2h0alfpage
d3, d5
(dB)
d3
−30
d5
−40
MGP595
Th =
90 °C
70 °C
50 °C
25 °C
Th =
90 °C
70 °C
50 °C
25 °C
−50
0
20
P.E.P. (W)
40
VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; typical values
Fig.11 Intermodulation distortion as a function of
output power.(1)
handbook,6h0alfpage
ηdt
(%)
Gp
40
ηdt
20
MGP596
30
Gp
(dB)
20
10
0
0
0
20
P.E.P. (W)
40
VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values
Fig.12 Double-tone efficiency and power gain as a
function of output power.
40
handbook, halfpage
Gp
(dB)
30
MGP597
20
handbook, halfpage
ri
ri
(Ω)
15
MGP598 −2.5
xi
(Ω)
−5
20
10
−7.5
xi
10
5
−10
0
1
10
f (MHz)
102
VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25 °C; ZL = 9,5 Ω
Fig.13 Power gain as a function of frequency.
Figs 13 and 14 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986
0
−12.5
1
10
f (MHz)
102
VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25 °C; ZL = 9,5 Ω
Fig.14 Input impedance (series components) as a
function of frequency.
Ruggedness in s.s.b. operation
The BLW83 is capable of withstanding a load mismatch
(VSWR = 50) under the following conditions:
f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th = 70 °C
and PLnom = 35 W (P.E.P.).
9
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