BLW96 데이터 시트보기 (PDF) - Philips Electronics
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BLW96 Datasheet PDF : 14 Pages
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Philips Semiconductors
HF/VHF power transistor
R.F. performance in s.s.b. class-A operation (linear power amplifier)
VCE = 40 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
Gp
IC
W
dB
A
typ. 50 (P.E.P.)
typ. 19
4
Product specification
BLW96
d3(1)
dB
typ. −40
d5(1)
dB
< −40
handbook, full pagewidth
50 Ω
C1
L1
L2
C2
L4
T.U.T.
R1
L3 C7
C9
C10
C8
50 Ω
+VBB
C3
C5
C4
C6
+VCC
MGP701
Fig.18 Test circuit; s.s.b. class-A.
List of components:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 220 nF polyester capacitor (100 V)
C4 = 100 µF/4 V electrolytic capacitor
C5 = 2 × 330 nF polyester capacitors (100 V) in parallel
C6 = 47 µF/63 V electrolytic capacitor
C7 = C10 = 2 × 82 pF ceramic capacitors (500 V) in parallel
C8 = C9 = 10 to 150 pF air dielectric trimmer
L1 = 45 nH; 2 turns enamelled Cu wire (1,6 mm); int. dia. 8,0 mm; length 4,0 mm; leads 2 × 3 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 110 nH; 4 turns enamelled Cu wire (2,0 mm); int. dia. 10,0 mm; length 8,0 mm; leads 2 × 2 mm
L4 = 210 nH; 5 turns enamelled Cu wire (2,0 mm); int. dia. 12,0 mm; length 10,0 mm; leads 2 × 2 mm
R1 = 27 Ω carbon resistor (± 5%; 0,5 W)
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
August 1986
11
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