BLW96 데이터 시트보기 (PDF) - Philips Electronics

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BLW96

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

Product specification

BLW96

APPLICATION INFORMATION

R.F. performance in s.s.b. class-AB operation (linear power amplifier)

VCE = 50 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz

OUTPUT POWER

Gp

ηdt (%)

IC (A)

W

dB

at 200 W (P.E.P.)

25 to 200 (P.E.P.)

> 13,5

> 40

< 5,0

d3 (1)

dB

< −30

d5(1)

dB

< −30

IC(ZS)

A

0,1

handbook, full pagewidth

C1

50 Ω

C2

L1

R1

L2

C3 C4

T.U.T.

R2

C10

L4

C11

C6 L3 C12

50 Ω

C13 C14

temperature

compensated bias

(Ri < 0.1 Ω)

C5

C7

C8

C9

+VCC

Fig.8 Test circuit; s.s.b. class-AB.

MGP691

List of components:

C1 = C4 = C10 = C14 = 100 pF film dielectric trimmer

C2 = 27 pF ceramic capacitor (500 V)

C3 = 270 pF polysterene capacitor (630 V)

C5 = C7 = C8 = 220 nF multilayer ceramic chip capacitor

C6 = 27 pF multilayer ceramic chip capacitor (500 V; ATC(2))

C9 = 47 µF/63 V electrolytic capacitor

C11 = 2 × 36 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel

C12 = 2 × 43 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel

C13 = 43 pF multilayer ceramic chip capacitor (500 V; ATC(2))

L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 × 5 mm

L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)

L3 = 150 nH; 5 turns Cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2 × 5 mm

L4 = 197 nH; 5 turns Cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2 × 5 mm

R1 = 0,66 Ω; parallel connection of 5 × 3,3 Ω metal film resistors (PR37; ± 5%; 1,6 W each)

R2 = 27 Ω carbon resistor (± 5%; 0,5 W)

Notes

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures should be increased by 6 dB.

2. ATC means American Technical Ceramics.

August 1986

6

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