BS616UV4016ECG10 데이터 시트보기 (PDF) - Brilliance Semiconductor

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BS616UV4016ECG10

Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit

Brilliance Semiconductor 

BSI

n ABSOLUTE MAXIMUM RATINGS (1)

SYMBOL

VTERM

TBIAS

TSTG

PT

IOUT

PARAMETER

Terminal Voltage with

Respect to GND

Temperature Under

Bias

Storage Temperature

Power Dissipation

DC Output Current

RATING

-0.5(2) to 4.6V

-40 to +85

-60 to +150

1.0

20

UNITS

V

OC

OC

W

MA

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

2. –2.0V in case of AC pulse width less than 30 ns

BS616UV4016

n OPERATING RANGE

RANG

Commercial

Industrial

AMBIENT

TEMPERATURE

0OC to + 70OC

-40OC to + 85OC

Vcc

1.8V ~ 3.6V

1.9V ~ 3.6V

n CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)

SYMBOL PAMAMETER CONDITIONS MAX. UNITS

CIN

Input

Capacitance

CIO

Input/Output

Capacitance

VIN = 0V

VI/O = 0V

6

pF

8

pF

1. This parameter is guaranteed and not 100% tested.

n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP.(1) MAX. UNITS

VCC

Power Supply

1.9

--

3.6

V

VIL

Input Low Voltage

VIH

Input High Voltage

IIL

ILO

VOL

VOH

ICC

ICCSB

ICCSB1(5)

Input Leakage Current

VIN = 0V to VCC,

CE = VIH

Output Leakage Current

VI/O = 0V to VCC

CE= VIH, or OE = VIH

Output Low Voltage

Output High Voltage

Operating Power

Current

Supply

VCC = Max, IOL = 0.1mA

VCC = Max, IOL = 2.0mA

VCC = Min, IOH = -0.1mA

VCC = Min, IOH = -1.0mA

CE = VIL,

IIO = 0mA, f = FMAX(4)

Standby Current – TTL

CE = VIH,

IIO = 0mA

Standby Current – CMOS

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

1. Typical characteristics are at TA=25OC.

2. Undershoot: -1.0V in case of pulse width less than 20 ns.

3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.

4. FMAX=1/tRC.

5. ICCSB1(MAX) is 3.0/6.0uA at VCC=2.0V/3.0V and TA=70OC.

VCC=2.0V

VCC=3.0V

VCC=2.0V

VCC=3.0V

-0.3(2)

1.4

2.0

--

0.6

--

V

0.8

--

VCC+0.3(3)

V

--

1

uA

--

--

1

uA

VCC=2.0V

--

VCC=3.0V

0.2

--

V

0.4

VCC=2.0V VCC-0.2

--

--

V

VCC=3.0V

2.4

VCC=2.0V

--

VCC=3.0V

12

--

mA

15

VCC=2.0V

--

VCC=3.0V

0.5

--

mA

1.0

VCC=2.0V

--

0.3

5.0

uA

VCC=3.0V

0.45

8.0

R0201-BS616UV4016

3

Revision 1.3

Sep. 2005

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